GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle i...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value | 1| of 0.03° or more and 1.1° or less and an off-angle component of a second direction has an absolute value | 2 of 0.75×| 1| or less, where the first direction is one of and directions and the second direction is the other thereof. Accordingly, the group III nitride semiconductor light-emitting device with excellent characteristics including the group III nitride semiconductor layer having good morphology and uniform physical properties and formed on the GaN crystal substrate is obtained. |
|---|