GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle i...

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Hauptverfasser: NAKAHATA SEIJI, NAKANISHI FUMITAKE
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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NAKANISHI FUMITAKE
description A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value | 1| of 0.03° or more and 1.1° or less and an off-angle component of a second direction has an absolute value | 2 of 0.75×| 1| or less, where the first direction is one of and directions and the second direction is the other thereof. Accordingly, the group III nitride semiconductor light-emitting device with excellent characteristics including the group III nitride semiconductor layer having good morphology and uniform physical properties and formed on the GaN crystal substrate is obtained.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2012305933A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2012305933A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2012305933A13</originalsourceid><addsrcrecordid>eNrjZDB1D_IPDVDw9PRU8PMMCfJ0cVUIdvX1dPb3cwl1DvEPUvDxdPcI0QUKhYR4-rkruLiGeTq78jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDI2MDU0tjY0dDY-JUAQCdoSi0</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE</title><source>esp@cenet</source><creator>NAKAHATA SEIJI ; NAKANISHI FUMITAKE</creator><creatorcontrib>NAKAHATA SEIJI ; NAKANISHI FUMITAKE</creatorcontrib><description>A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value | 1| of 0.03° or more and 1.1° or less and an off-angle component of a second direction has an absolute value | 2 of 0.75×| 1| or less, where the first direction is one of &lt;10-10&gt; and &lt;1-210&gt; directions and the second direction is the other thereof. Accordingly, the group III nitride semiconductor light-emitting device with excellent characteristics including the group III nitride semiconductor layer having good morphology and uniform physical properties and formed on the GaN crystal substrate is obtained.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121206&amp;DB=EPODOC&amp;CC=US&amp;NR=2012305933A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121206&amp;DB=EPODOC&amp;CC=US&amp;NR=2012305933A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAKAHATA SEIJI</creatorcontrib><creatorcontrib>NAKANISHI FUMITAKE</creatorcontrib><title>GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE</title><description>A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value | 1| of 0.03° or more and 1.1° or less and an off-angle component of a second direction has an absolute value | 2 of 0.75×| 1| or less, where the first direction is one of &lt;10-10&gt; and &lt;1-210&gt; directions and the second direction is the other thereof. Accordingly, the group III nitride semiconductor light-emitting device with excellent characteristics including the group III nitride semiconductor layer having good morphology and uniform physical properties and formed on the GaN crystal substrate is obtained.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB1D_IPDVDw9PRU8PMMCfJ0cVUIdvX1dPb3cwl1DvEPUvDxdPcI0QUKhYR4-rkruLiGeTq78jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDI2MDU0tjY0dDY-JUAQCdoSi0</recordid><startdate>20121206</startdate><enddate>20121206</enddate><creator>NAKAHATA SEIJI</creator><creator>NAKANISHI FUMITAKE</creator><scope>EVB</scope></search><sort><creationdate>20121206</creationdate><title>GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE</title><author>NAKAHATA SEIJI ; NAKANISHI FUMITAKE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012305933A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAKAHATA SEIJI</creatorcontrib><creatorcontrib>NAKANISHI FUMITAKE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAKAHATA SEIJI</au><au>NAKANISHI FUMITAKE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE</title><date>2012-12-06</date><risdate>2012</risdate><abstract>A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value | 1| of 0.03° or more and 1.1° or less and an off-angle component of a second direction has an absolute value | 2 of 0.75×| 1| or less, where the first direction is one of &lt;10-10&gt; and &lt;1-210&gt; directions and the second direction is the other thereof. Accordingly, the group III nitride semiconductor light-emitting device with excellent characteristics including the group III nitride semiconductor layer having good morphology and uniform physical properties and formed on the GaN crystal substrate is obtained.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T16%3A20%3A18IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAKAHATA%20SEIJI&rft.date=2012-12-06&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2012305933A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true