REGROWN SHOTTKY STRUCTURES FOR GAN HEMT DEVICES

REGROWN SHOTTKY STRUCTURES FOR GAN HEMT DEVICES

Embodiments include but are not limited to apparatuses and systems including a buffer layer, a group III-V layer over the buffer layer, a source contact and a drain contact on the group III-V layer, and a regrown Schottky layer over the group III-V layer, and between the source and drain contacts. T...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: BEAM, III EDWARD A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
TRANSMISSION
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Beschreibung
Zusammenfassung:Embodiments include but are not limited to apparatuses and systems including a buffer layer, a group III-V layer over the buffer layer, a source contact and a drain contact on the group III-V layer, and a regrown Schottky layer over the group III-V layer, and between the source and drain contacts. The embodiments further include methods for making the apparatuses and systems. Other embodiments may be described and claimed.