REDUCED RESIDUAL FORMATION IN ETCHED MULTI-LAYER STACKS

A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the sec...

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Bibliographische Detailangaben
Hauptverfasser: BROOKS CYNTHIA B, XU FRANK Y, LIU WEIJUN, LABRAKE DWAYNE L, LENTZ DAVID J
Format: Patent
Sprache:eng
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Zusammenfassung:A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.