METHOD OF CADMIUM MOLECULAR BEAM BASED ANNEALS FOR MANUFACTURE OF HGCDTE PHOTODIODE ARRAYS

METHOD OF CADMIUM MOLECULAR BEAM BASED ANNEALS FOR MANUFACTURE OF HGCDTE PHOTODIODE ARRAYS

In the preferred embodiment of the present invention, narrow bandgap II-VI compound semiconductor HgxCd1-xTe (0.1 x 0.5) (HgCdTe) wafers are annealed under Cd supersaturated conditions by exposing the HgCdTe planar or mesa surfaces to a Cd molecular beam in a vacuum deposition system before, during,...

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Bibliographische Detailangaben
1. Verfasser: WAN CHANG-FENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In the preferred embodiment of the present invention, narrow bandgap II-VI compound semiconductor HgxCd1-xTe (0.1 x 0.5) (HgCdTe) wafers are annealed under Cd supersaturated conditions by exposing the HgCdTe planar or mesa surfaces to a Cd molecular beam in a vacuum deposition system before, during, and/or after anneals performed during individual photodiode fabrication process steps or HgCdTe epitaxial growth steps for eliminating or neutralizing the bulk or interfacial defects.