MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE

A manufacturing method of liquid crystal display device is provided that can increase manufacturing yield by reducing the number of layers and manufacturing costs and by preventing backlight lamp failure. In the manufacturing method of the device, a semiconductor layer 4 and a pixel electrode 5 are...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HAZAWA EISAKU, YAMAMOTO HIROAKI, TSUCHIYA KENJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A manufacturing method of liquid crystal display device is provided that can increase manufacturing yield by reducing the number of layers and manufacturing costs and by preventing backlight lamp failure. In the manufacturing method of the device, a semiconductor layer 4 and a pixel electrode 5 are formed on a gate insulating film 3. Subsequently, a drain electrode electrically interconnecting the semiconductor layer 4 and the pixel electrode 5 of the pixel region A is formed by overlaying a flat solid conductive film on the substrate, followed by removing the conductive film with the use of a photoresist pattern as a mask, while exposing the semiconductor layer 4 at the pixel region A and the adjacent area C. The semiconductor layer 4 at the pixel region A is etched by using, as an index, an etching amount of the semiconductor layer 4 at the adjacent area.