THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

THREE DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial...

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Bibliographische Detailangaben
Hauptverfasser: KIM KYUNGHYUN, EOM DAEHONG, HWANG KIHYUN, LEE SEONGSOO, KIM JINGYUN, YANG JUN-YOUL, CHA SE-HO, JANG DAEHYUN, YEO CHADONG, LEE SUNGHAE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Three dimensional semiconductor memory devices and methods of fabricating the same are provided. According to the method, sacrificial layers and insulating layers are alternately and repeatedly stacked on a substrate, and a cutting region penetrating an uppermost sacrificial layer of the sacrificial layers is formed. The cutting region is filled with a non sacrificial layer. The insulating layers and the sacrificial layers are patterned to form a mold pattern. The mold pattern includes insulating patterns, sacrificial patterns, and the non sacrificial layer in the cutting region. The sacrificial patterns may be replaced with electrodes. The related semiconductor memory device is also provided.