METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

A method of manufacturing a semiconductor device is disclosed. The method includes forming a third film so as to cover a second pattern, a second mask pattern, and a first film; etching back the third film to form a first sidewall line pattern along a sidewall of the second pattern and to form a first sidewall mask pattern along a sidewall of the second mask pattern; forming a third mask pattern comprising a resist film so as to cover the second mask pattern and the first sidewall mask pattern; and selectively removing the second pattern using the third mask pattern as a mask and thereafter removing the third mask pattern.