GATE OXIDE FILM INCLUDING A NITRIDE LAYER DEPOSITED THEREON AND METHOD OF FORMING THE GATE OXIDE FILM
A method for forming a gate stack of a semiconductor device comprises depositing a gate oxide layer on a channel region of a semiconductor substrate using chemical vapor deposition, atomic layer deposition or molecular layer deposition, depositing a nitride layer on the gate oxide layer, oxidizing t...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method for forming a gate stack of a semiconductor device comprises depositing a gate oxide layer on a channel region of a semiconductor substrate using chemical vapor deposition, atomic layer deposition or molecular layer deposition, depositing a nitride layer on the gate oxide layer, oxidizing the deposited nitride layer, depositing a high-K dielectric layer on the oxidized nitride layer, and forming a metal gate on the high-K dielectric layer. |
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