SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

According to one embodiment, a method of manufacturing a semiconductor device including a memory cell transistor in a first region of a substrate and a select gate transistor in a second region of the substrate includes: forming a gate insulating film, a lower gate electrode, an inter-electrode insulating film, an upper gate electrode, and a hard mask on the substrate; forming a groove passing through the hard mask, the upper gate electrode, and the inter-electrode insulating film and reaching the lower gate electrode in the second region; and forming a connection layer having a crystal structure which preferentially has a specific crystal orientation and that electrically connects between the lower gate electrode and the upper gate electrode by being selectively crystal-grown while being subjected to an influence from a crystal structure of the lower gate electrode in the groove