METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING BOWING PREVENTION FILM

A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE CHEOLKYU, PARK KI-JIN, YOON KUKHAN, KOO SEONG-MO, KIM JONG-KYU, LEE JUNSOO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film.