METHOD OF CALCULATING MODEL PARAMETERS OF A SUBSTRATE, A LITHOGRAPHIC APPARATUS AND AN APPARATUS FOR CONTROLLING LITHOGRAPHIC PROCESSING BY A LITHOGRAPHIC APPARATUS

Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined...

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Hauptverfasser: SLOTBOOM DAAN MAURITS, LYULINA IRINA, VAN KEMENADE MARC, HERES PIETER JACOB, TENNER MANFRED GAWEIN, VAN DER SANDEN STEFAN CORNELIS THEODORUS, SIMONS HUBERTUS JOHANNES GERTRUDUS
Format: Patent
Sprache:eng
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Zusammenfassung:Estimating model parameters of a lithographic apparatus and controlling lithographic processing by a lithographic apparatus includes performing an exposure using a lithographic apparatus projecting a pattern onto a wafer. A set of predetermined wafer measurement locations is measured. Predetermined and measured locations of the marks are used to generate radial basis functions. Model parameters of said substrate are calculated using the generated radial basis functions as a basis function across said substrate. Finally, the estimated model parameters are used to control the lithographic apparatus in order to expose the substrate.