Semiconductor Device Having Shared Contact Hole and a Manufacturing Method Thereof

A semiconductor device has a high-speed circuit and a high-density circuit, each having at least two field effect transistors and two gate electrodes. In the high-speed circuit, a first gate electrode of a first field effect transistor and a second gate electrode of a second field effect transistor are separated by a first pitch. In the high-density circuit, a third gate electrode of a third field effect transistor and a fourth gate electrode of a fourth field effect transistor are separated by a second pitch. The first pitch is larger than the second pitch. Provision of a notch in the third gate electrode of the third field effect transistor in the high-density circuit, at a portion reached by a shared contact hole shared by the third gate electrode and the fourth transistor, increases the contact area between the shared contact hole and an impurity region source/drain of the fourth transistor.