Method for Preventing the Over-Stress of MV Devices

A device includes a first power supply line carrying a first positive power supply voltage, and a second power supply line carrying a second positive power supply voltage lower than the first positive power supply voltage. The device further includes a protection circuit having a MOS transistor. A d...

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Bibliographische Detailangaben
Hauptverfasser:	LIAO CHUN HAO, TU NANG PING
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROLLING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS REGULATING SEMICONDUCTOR DEVICES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Beschreibung
Zusammenfassung:	A device includes a first power supply line carrying a first positive power supply voltage, and a second power supply line carrying a second positive power supply voltage lower than the first positive power supply voltage. The device further includes a protection circuit having a MOS transistor. A diode is coupled to the MOS transistor. The source-to-drain path of the MOS transistor and the diode are serially coupled between the first and the second power supply lines. The diode is forward biased by the first and the second positive power supply voltages.