ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP
An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned...
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| creator | MEYER TOBIAS BIEBERSDORF ANDREAS TAKI TETSUYA PETER MATTHIAS LAUBSCH ANSGAR SABATHIL MATTHIAS OFF JUERGEN HERTKORN JOACHIM |
| description | An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. |
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The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. 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The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB19XF1DgnydHb08YlUCAj1DXB1UfAPCPGHiPv7eTorBLv6ejr7-7mEOof4Byk4e3gG8DCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwNDI0MzQ0MDY0dDY-JUAQC-Jijn</recordid><startdate>20120628</startdate><enddate>20120628</enddate><creator>MEYER TOBIAS</creator><creator>BIEBERSDORF ANDREAS</creator><creator>TAKI TETSUYA</creator><creator>PETER MATTHIAS</creator><creator>LAUBSCH ANSGAR</creator><creator>SABATHIL MATTHIAS</creator><creator>OFF JUERGEN</creator><creator>HERTKORN JOACHIM</creator><scope>EVB</scope></search><sort><creationdate>20120628</creationdate><title>ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP</title><author>MEYER TOBIAS ; BIEBERSDORF ANDREAS ; TAKI TETSUYA ; PETER MATTHIAS ; LAUBSCH ANSGAR ; SABATHIL MATTHIAS ; OFF JUERGEN ; HERTKORN JOACHIM</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2012161103A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MEYER TOBIAS</creatorcontrib><creatorcontrib>BIEBERSDORF ANDREAS</creatorcontrib><creatorcontrib>TAKI TETSUYA</creatorcontrib><creatorcontrib>PETER MATTHIAS</creatorcontrib><creatorcontrib>LAUBSCH ANSGAR</creatorcontrib><creatorcontrib>SABATHIL MATTHIAS</creatorcontrib><creatorcontrib>OFF JUERGEN</creatorcontrib><creatorcontrib>HERTKORN JOACHIM</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MEYER TOBIAS</au><au>BIEBERSDORF ANDREAS</au><au>TAKI TETSUYA</au><au>PETER MATTHIAS</au><au>LAUBSCH ANSGAR</au><au>SABATHIL MATTHIAS</au><au>OFF JUERGEN</au><au>HERTKORN JOACHIM</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP</title><date>2012-06-28</date><risdate>2012</risdate><abstract>An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP |
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