ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP

ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP

An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned...

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Bibliographische Detailangaben
Hauptverfasser: MEYER TOBIAS, BIEBERSDORF ANDREAS, TAKI TETSUYA, PETER MATTHIAS, LAUBSCH ANSGAR, SABATHIL MATTHIAS, OFF JUERGEN, HERTKORN JOACHIM
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm.