MEMS PROCESS METHOD FOR HIGH ASPECT RATIO STRUCTURES

Methods for the controlled manufacture of high aspect ratio features. The method may include forming a layer stack on a top surface of a substrate and forming features in the layers of the layer stack. The high aspect ratio features may be defined using a resist layer that is patterned with a photol...

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Bibliographische Detailangaben
Hauptverfasser:	PARRISH CHARLES J, SHANK STEVEN M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Methods for the controlled manufacture of high aspect ratio features. The method may include forming a layer stack on a top surface of a substrate and forming features in the layers of the layer stack. The high aspect ratio features may be defined using a resist layer that is patterned with a photolithographic condition. After removing at least one of the layers removed from the top of the layer stack, a feature dimension may be measured for features at different locations on the substrate. The method may further include changing the photolithographic condition based on the measured dimension and processing another substrate using the changed photolithographic condition.