THIN FILM TRANSISTOR ARRAY PANEL

THIN FILM TRANSISTOR ARRAY PANEL

A thin film transistor array panel includes an insulating substrate, a gate line disposed on the insulating substrate having a gate electrode, a first gate insulating layer disposed on the gate line and made of silicon nitride, a second gate insulating layer disposed on the first gate insulating lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE WOO GEUN, JIN SANG WAN, XUN ZHU, SONG JAE WON, YOON KAP SOO, KIM KI-WON, CHOI YOUNG JOO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A thin film transistor array panel includes an insulating substrate, a gate line disposed on the insulating substrate having a gate electrode, a first gate insulating layer disposed on the gate line and made of silicon nitride, a second gate insulating layer disposed on the first gate insulating layer and made of silicon oxide, an oxide semiconductor disposed on the second gate insulating layer, a data line disposed on the oxide semiconductor and having a source electrode, a drain electrode disposed on the oxide semiconductor and facing the source electrode, and a pixel electrode that is connected to the drain electrode. A thickness of the second gate insulating layer may range from 200 to less than 500 .