PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES

PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES

A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BECKER DAVID SCOTT, RATKOVICH ANTHONY S, BUTTERBAUGH JEFFERY W
Format: Patent
Sprache:eng
Schlagworte:
DECORATIVE ARTS
MOSAICS
PAPERHANGING
PERFORMING OPERATIONS
PRODUCING DECORATIVE EFFECTS
TARSIA WORK
TRANSPORTING
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Beschreibung
Zusammenfassung:A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150° C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.