CONTROLLED CONTACT FORMATION PROCESS

CONTROLLED CONTACT FORMATION PROCESS

A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to repl...

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Bibliographische Detailangaben
Hauptverfasser: RAMACHANDRAN RAVIKUMAR, SARDESAI VIRAJ YASHAWANT, UTOMO HENRY K, LEVEDAKIS DIMITRI ANASTASSIOS, VENIGALLA RAJASEKHAR, KWON UNOH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are then applied and etched in the formation of metal contacts.