CONNECTING MATERIAL, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 μm) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness o...

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Bibliographische Detailangaben
Hauptverfasser:	OKAMOTO MASAHIDE, MURASATO YUKI, IKEDA OSAMU
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING COMBINED OPERATIONS CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR OTHER WORKING OF METAL PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SOLDERING OR UNSOLDERING TRANSPORTING UNIVERSAL MACHINE TOOLS WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 μm) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness of an Al layer needs to make as thick as possible in order to fully exhibit stress relaxation performance of the Al layer. Provided is a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces.