METHOD FOR MANUFACTURING MOS TRANSISTORS WITH DIFFERENT TYPES OF GATE STACKS

A method for manufacturing three types of MOS transistors in three regions of a same substrate, including the steps of: forming a first insulating layer, removing the first insulating layer from the first and second regions, forming a silicon oxide layer, depositing an insulating layer having a diel...

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Bibliographische Detailangaben
Hauptverfasser: HUGUENIN JEAN-LUC, BIDAL GREGORY
Format: Patent
Sprache:eng
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Zusammenfassung:A method for manufacturing three types of MOS transistors in three regions of a same substrate, including the steps of: forming a first insulating layer, removing the first insulating layer from the first and second regions, forming a silicon oxide layer, depositing an insulating layer having a dielectric constant which is at least twice greater than that of silicon oxide, depositing a first conductive oxygen scavenging layer, removing the first conductive layer from the second and third regions, and annealing.