SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor device includes a bit line that is provided in a semiconductor substrate, a silicide layer that has side faces and a bottom face surrounded by the bit line and is provided within the bit line, an ONO film that is provided on the semiconductor substrate, and sidewalls that are in cont...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HEO NAMJIN, UTSUNO YUKIHIRO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes a bit line that is provided in a semiconductor substrate, a silicide layer that has side faces and a bottom face surrounded by the bit line and is provided within the bit line, an ONO film that is provided on the semiconductor substrate, and sidewalls that are in contact with the side faces of a trapping layer in the ONO film over the portions of the bit line located on both sides of the silicide layer, the sidewalls being formed with silicon oxide films including phosphorus.