MEMORY BASE CELL AND MEMORY BANK

A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the "sea of gates" Model, in which the base element of the structure is a cell able to be configured with a minimum width in relati...

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Bibliographische Detailangaben
Hauptverfasser:	PUCILLO STEFANO, NARDONE VALENTINA, CANEGALLO ROBERTO, PERUGINI LUCA, MUCCI CLAUDIO, INNOCENTI MASSIMILIANO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INDUCTANCES INFORMATION STORAGE MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES STATIC STORES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSFORMERS
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Beschreibung
Zusammenfassung:	A memory base cell stores a bit of information implemented from a regular and compact structure made up of multiple identical and replicated base elements, on the "sea of gates" Model, in which the base element of the structure is a cell able to be configured with a minimum width in relation to the particular technology used. Such a cell includes a bistable element with an input node operatively connected to a writing data line of the memory base cell, and an output node operatively connected to a reading data line of the memory base cell. The bistable element also has a first inverter and a second inverter arranged in a feedback configuration with respect to one another between the input node and the output node of the bistable element.