PROJECTION EXPOSURE METHOD AND PROJECTION EXPOSURE SYSTEM THEREFOR

The disclosure provides a projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask. The mask has a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, wi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
1. Verfasser:	GOEHNERMEIER AKSEL
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The disclosure provides a projection exposure method for exposing a radiation-sensitive substrate with at least one image of a pattern of a mask. The mask has a first pattern area with a first subpattern, and at least one second pattern area, arranged laterally offset from the first pattern area, with a second subpattern. The first subpattern is irradiated during a first illumination time interval with a first angular distribution, adapted to the first subpattern, of the illumination radiation. Thereafter, the second subpattern is irradiated during the second illumination time interval with a second angular distribution, adapted to the second subpattern, of the illumination radiation, said second angular distribution differing from the first angular distribution.