METAL CAP LAYER WITH ENHANCED ETCH RESISTIVITY FOR COPPER-BASED METAL REGIONS IN SEMICONDUCTOR DEVICES

METAL CAP LAYER WITH ENHANCED ETCH RESISTIVITY FOR COPPER-BASED METAL REGIONS IN SEMICONDUCTOR DEVICES

During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet...

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Bibliographische Detailangaben
Hauptverfasser: KAHLERT VOLKER, STRECK CHRISTOF
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:During the fabrication of sophisticated metallization systems of semiconductor devices, material deterioration of conductive cap layers may be significantly reduced by providing a noble metal on exposed surface areas after the patterning of the corresponding via openings. Hence, well-established wet chemical etch chemistries may be used while not unduly contributing to process complexity.