SINGLE TRANSISTOR FLOATING-BODY DRAM DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES

SINGLE TRANSISTOR FLOATING-BODY DRAM DEVICES HAVING VERTICAL CHANNEL TRANSISTOR STRUCTURES

Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the fi...

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Bibliographische Detailangaben
Hauptverfasser: YOON HONG-SIK, YEO IN-SEOK, HUO ZONG-LIANG, BAIK SEUNG-JAE, KIM SHI-EUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.