INTERMEDIATE MATERIALS AND METHODS FOR HIGH-TEMPERATURE APPLICATIONS

A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a...

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Hauptverfasser: SHETTY RAJ, KORZENIOWSKI BEN, KHATTAK CHANDRA, SCHWERDTFEGER, JR. CARL RICHARD, DHANARAJ GOVINDHAN
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creator SHETTY RAJ
KORZENIOWSKI BEN
KHATTAK CHANDRA
SCHWERDTFEGER, JR. CARL RICHARD
DHANARAJ GOVINDHAN
description A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a compound, such as, a carbide, nitride, oxide, or boride. The method for growing a crystal includes providing an intermediate material between contact surfaces between a shaft and a crucible supported by the shaft prior to melting a charge material in the crucible.
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subjects AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title INTERMEDIATE MATERIALS AND METHODS FOR HIGH-TEMPERATURE APPLICATIONS
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