INTERMEDIATE MATERIALS AND METHODS FOR HIGH-TEMPERATURE APPLICATIONS

A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a...

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Bibliographische Detailangaben
Hauptverfasser:	SHETTY RAJ, KORZENIOWSKI BEN, KHATTAK CHANDRA, SCHWERDTFEGER, JR. CARL RICHARD, DHANARAJ GOVINDHAN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A system and method for growing crystals is described. The system includes a crucible, a shaft adapted to support the crucible, and an intermediate material between the crucible and the shaft having a coating directly applied to contact surfaces of the crucible and the shaft. The coating includes a compound, such as, a carbide, nitride, oxide, or boride. The method for growing a crystal includes providing an intermediate material between contact surfaces between a shaft and a crucible supported by the shaft prior to melting a charge material in the crucible.