FEEDBACK CONTROL OF A CHEMICAL MECHANICAL POLISHING DEVICE PROVIDING MANIPULATION OF REMOVAL RATE PROFILES

A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wher...

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Bibliographische Detailangaben
Hauptverfasser:	PRABHU GOPALAKRISHNA B, SCHWARM ALEXANDER T, SHANMUGASUNDRAM ARULKUMAR P
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS FUNCTIONAL ELEMENTS OF SUCH SYSTEMS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PERFORMING OPERATIONS PHYSICS POLISHING REGULATING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.