MODIFICATION OF NITRIDE TOP LAYER

A method of forming a nitride film is disclosed. In one embodiment, the method comprises performing an ending film deposition process that differs from the main film deposition process in terms of the flow rates of the reactive and ion source gases, and maintaining acceleration power of a CVD tool d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	UMMER SHAMAS MUSTHAFA, SUWARNO-HANDAYANA AURELIA, YANG DAEWON, DOMENICUCCI ANTHONY GENE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR CHEMISTRY ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PLASMA TECHNIQUE PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS
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Beschreibung
Zusammenfassung:	A method of forming a nitride film is disclosed. In one embodiment, the method comprises performing an ending film deposition process that differs from the main film deposition process in terms of the flow rates of the reactive and ion source gases, and maintaining acceleration power of a CVD tool during the ending film deposition process. A post deposition process may also be used to remove a denser top layer of nitride, resulting in a nitride film having a consistent density.