TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNCTION BASED ON SILICON/GERMANIUM MATERIALS

TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY USING A PN JUNCTION BASED ON SILICON/GERMANIUM MATERIALS

By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FORSBERG MARKUS, BURBACH GERT, STEPHAN ROLF, MOWRY ANTHONY
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:By incorporating germanium material into thermal sensing diode structures, the sensitivity thereof may be significantly increased. In some illustrative embodiments, the process for incorporating the germanium material may be performed with high compatibility with a process flow for incorporating a silicon/germanium material into P-channel transistors of sophisticated semiconductor devices. Hence, temperature control efficiency may be increased with reduced die area consumption.