SEMICONDUCTOR CAPACITOR

SEMICONDUCTOR CAPACITOR

An improved semiconductor capacitor and method of fabrication is disclosed. A nitride stack, comprising alternating sublayers of slow-etch and fast-etch nitride is deposited on a substrate. The nitride stack is etched via an anisotropic etch technique such as reactive ion etch. A wet etch then etche...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HORAK DAVID VACLAV, SHOBHA HOSADURGA, PONOTH SHOM, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An improved semiconductor capacitor and method of fabrication is disclosed. A nitride stack, comprising alternating sublayers of slow-etch and fast-etch nitride is deposited on a substrate. The nitride stack is etched via an anisotropic etch technique such as reactive ion etch. A wet etch then etches the nitride stack, forming a corrugated shape. The corrugated shape increases surface area, and hence increases the capacitance of the capacitor.