FIELD TRANSISTORS FOR ELECTROSTATIC DISCHARGE PROTECTION AND METHODS FOR FABRICATING THE SAME

A field transistor for electrostatic discharge (ESD) protection and method for making such a transistor is described. The field transistor includes a gate conductive layer pattern formed on a field oxide layer. Since the gate conductive layer pattern is formed on the field oxide layer, a thin gate i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM JONG-HWAN, RYU JUN-HYEONG, KANG TAEG-HYUN
Format: Patent
Sprache:eng
Schlagworte:
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