RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF
An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provi...
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| creator | CHOI SEUNGMOO HADDAD SAMEER |
| description | An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2011253968A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2011253968A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2011253968A13</originalsourceid><addsrcrecordid>eNqNy7EKwjAUQNEsDqL-wwPngGlR6hiTF_PAJpKkhUylSJxEC_X_0cEPcLrLuUuWA0aKiXqEFlsfMsgQZIYukjvDlRN3oMlrhIgXVAk09qQQpNPfIVmvI3gDRp4CKZnIO0gWA3qzZov7-JjL5tcV2xpMyvIyvYYyT-OtPMt76GK1E6La18dDI0X9n_oAvUEyGw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF</title><source>esp@cenet</source><creator>CHOI SEUNGMOO ; HADDAD SAMEER</creator><creatorcontrib>CHOI SEUNGMOO ; HADDAD SAMEER</creatorcontrib><description>An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111020&DB=EPODOC&CC=US&NR=2011253968A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20111020&DB=EPODOC&CC=US&NR=2011253968A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHOI SEUNGMOO</creatorcontrib><creatorcontrib>HADDAD SAMEER</creatorcontrib><title>RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF</title><description>An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy7EKwjAUQNEsDqL-wwPngGlR6hiTF_PAJpKkhUylSJxEC_X_0cEPcLrLuUuWA0aKiXqEFlsfMsgQZIYukjvDlRN3oMlrhIgXVAk09qQQpNPfIVmvI3gDRp4CKZnIO0gWA3qzZov7-JjL5tcV2xpMyvIyvYYyT-OtPMt76GK1E6La18dDI0X9n_oAvUEyGw</recordid><startdate>20111020</startdate><enddate>20111020</enddate><creator>CHOI SEUNGMOO</creator><creator>HADDAD SAMEER</creator><scope>EVB</scope></search><sort><creationdate>20111020</creationdate><title>RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF</title><author>CHOI SEUNGMOO ; HADDAD SAMEER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2011253968A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>CHOI SEUNGMOO</creatorcontrib><creatorcontrib>HADDAD SAMEER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHOI SEUNGMOO</au><au>HADDAD SAMEER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF</title><date>2011-10-20</date><risdate>2011</risdate><abstract>An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF |
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