RESISTIVE MEMORY ARRAY USING P-I-N DIODE SELECT DEVICE AND METHODS OF FABRICATION THEREOF

An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHOI SEUNGMOO, HADDAD SAMEER
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An electronic structure includes a resistive memory device, and a P-I-N diode in operative association with the resistive memory device. A plurality of such electronic structures are used in a resistive memory array, with the P-I-N diodes functioning as select devices in the array. Methods are provided for fabricating such resistive memory device-P-I-N diode structures.