DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS

Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a base together...

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Bibliographische Detailangaben
Hauptverfasser:	RADEL GUENTER, DADZIS KASPARS, NAUERT DOREEN, REIMANN CHRISTIAN, FREUDENBERG BERNHARD, TREMPA MATTHIAS, DIETRICH MARC, FRIEDRICH JOCHEN, PROSKE STEFAN
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS METALLURGY PERFORMING OPERATIONS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TRANSPORTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	Device for the production of silicon blocks, the device comprising a vessel for receiving a silicon melt with a bottom, an inside, an outside and a central longitudinal axis and at least one support plate which is at least partially in direct contact with the bottom, and which forms a base together with the bottom, and means for generating an inhomogeneous temperature field on the inside of the bottom.