INTERNAL VOLTAGE GENERATING CIRCUIT FOR PREVENTING VOLTAGE DROP OF INTERNAL VOLTAGE

An internal voltage generating circuit is utilized to perform a TDBI (Test During Burn-in) operation for a semiconductor device. The internal voltage generating circuit produces an internal voltage at a high voltage level, as an internal voltage, in not only a standby section but also in an active s...

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Bibliographische Detailangaben
Hauptverfasser:	YOON SEOKOL, LEE KANG-SEOL
Format:	Patent
Sprache:	eng
Schlagworte:	AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATIONOF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES BASIC ELECTRONIC CIRCUITRY CONTROLLING ELECTRICITY INFORMATION STORAGE PHYSICS REGULATING STATIC STORES SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Beschreibung
Zusammenfassung:	An internal voltage generating circuit is utilized to perform a TDBI (Test During Burn-in) operation for a semiconductor device. The internal voltage generating circuit produces an internal voltage at a high voltage level, as an internal voltage, in not only a standby section but also in an active section in response to a test operation signal activated in a test operation. Accordingly, dropping of the internal voltage in the standby section of the test operation and failure due to open or short circuiting are prevented. As a result, reliability of the semiconductor chip, by preventing the generation of latch-up caused by breakdown of internal circuits, is assured.