MULTI INDUCTIVELY COUPLED PLASMA REACTOR AND METHOD THEREOF

Disclosed is a multi-inductively coupled plasma reactor and method thereof. In a multi-inductively coupled plasma reacting method, an etching method to increase a specific portion of a substrate to be processed includes etching a specific portion of a substrate to be processed; and depositing a passivation layer on a surface of the specific portion etched, wherein the etching and depositing steps are repeatedly proceeded, and one of both steps is executed when there is plasma formed by a central plasma source and a peripheral plasma source. According to the multi-inductively coupled plasma reactor and method thereof of the invention, it is possible that plasma is uniformly processed on the entire area of the substrate since the central plasma source and the peripheral source are provided separately. Further, it is possible to form an independent multiple plasma area without electrical interference in the plasma reactor using the interference prevention electrode grounded between the central plasma source and the peripheral plasma source. Further, the plasma formed by the central plasma source and the peripheral plasma source is used to deeply etch a specific portion of the substrate to be processed.