DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE

A dielectric ceramic composition comprising a main component expressed by a general formula (Ba1−x−ySrxCay)m(Ti1−zZrz)O3, Mg oxide, oxides of at least one kind selected from Mn and Cr, rare earth oxide, an oxide including Si and a composite oxide including Ba, Sr and Zr. The general formula shows that 0.20 x 0.40, 0 y 0.20, 0 z 0.30, and 0.950 m 1.050. Within a temperature range of −25 to 105° C., a capacitance change rate on the basis of a capacitance at 25° C. is within −15 to +5% with respect to slope "a" which shows capacity temperature characteristic on the basis of the capacitance at 25° C., and the slope "a" is −5500 to −1800 ppm/° C. By the present invention, a dielectric ceramic composition which is able to set the capacitance change rate to a predetermined range with respect to absolute value of capacity temperature characteristic within a wide temperature range even when the absolute value is large can be obtained.