PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING A PHOTOVOLTAIC CELL

A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a...

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Bibliographische Detailangaben
Hauptverfasser:	MEREU BOGDAN, ROSCHEK TOBIAS, GOLDBACH HANNO, BENAGLI STEFANO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TRANSPORTING
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Beschreibung
Zusammenfassung:	A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).