SEMICONDUCTOR DEVICE MANUFACTURING METHOD AN INTEGRATED CIRCUIT COMPRISING SUCH A DEVICE

A method of manufacturing a semiconductor device on a substrate (10) is disclosed. The method comprises providing the substrate (10) including a body region (12) protruding from said substrate (10), the body region (12) being covered by a gate electrode material (16, 56) forming a first gate region (18) on a first side of the body region (12) and a second gate region (20) on a second side of the body region (12), the gate material (16, 56) being separated from the body region (12) by a dielectric layer (14); and introducing a dopant (22, 58) of a first conductivity type into the gate electrode material (16, 56) such that the first gate region (18, 20) is exposed to the dopant while the second gate region (20, 18) is substantially sheltered from the dopant by the protruding body region (12). This allows for versatile tuning of the work function of a single gate to be formed. An integrated circuit comprising such a semiconductor device is also disclosed.