METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
A method of manufacturing semiconductor devices comprises forming an etch target layer and auxiliary patterns over a semiconductor substrate, forming spacers on sidewalls of the auxiliary patterns, removing the auxiliary patterns, performing an etch process to change both corners of upper portions o...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing semiconductor devices comprises forming an etch target layer and auxiliary patterns over a semiconductor substrate, forming spacers on sidewalls of the auxiliary patterns, removing the auxiliary patterns, performing an etch process to change both corners of upper portions of the spacers to be symmetrical to one another, and patterning the etch target layer by using the spacers. |
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