Semiconductor Package and Method for Making the Same

The present invention relates to a semiconductor package and a method for making the same. The semiconductor package comprises a substrate, a first metal layer, a first dielectric layer, a first upper electrode, a first protective layer, a second metal layer and a second protective layer. The substr...

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Bibliographische Detailangaben
Hauptverfasser: LEE TECKONG, CHEN CHIEN-HUA
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a semiconductor package and a method for making the same. The semiconductor package comprises a substrate, a first metal layer, a first dielectric layer, a first upper electrode, a first protective layer, a second metal layer and a second protective layer. The substrate has at least one via structure. The first metal layer is disposed on a first surface of the substrate, and comprises a first lower electrode. The first dielectric layer is disposed on the first lower electrode. The first upper electrode is disposed on the first dielectric layer, and the first upper electrode, the first dielectric layer and the first lower electrode form a first capacitor. The first protective layer encapsulates the first capacitor. The second metal layer is disposed on the first protective layer, and comprises a first inductor. The second protective layer encapsulates the first inductor. Whereby, the first inductor, the first capacitor and the via structure are integrated into the semiconductor package, so that the size of the product is reduced.