Interwafer interconnects for stacked CMOS image sensors

An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell havi...

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Bibliographische Detailangaben
Hauptverfasser: SUMMA JOSEPH R, MCCARTEN JOHN P, TIVARUS CRISTIAN A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An image sensor includes a sensor wafer and a circuit wafer electrically connected to the sensor wafer. The sensor wafer includes unit cells with each unit cell having at least one photodetector and a charge-to-voltage conversion region. The circuit wafer includes unit cells with each unit cell having an electrical node associated with each unit cell on the sensor wafer. An inter-wafer interconnect is connected between each unit cell on the sensor wafer and a respective unit cell on the circuit wafer. The location of at least a portion of the inter-wafer interconnects is shifted or disposed at a different location with respect to the location of one or both components connected to the shifted inter-wafer interconnects. The locations of the inter-wafer interconnects can be disposed at different locations with respect to the locations of the charge-to-voltage conversion regions or with respect to the locations of the electrical nodes.