Photovoltaic device back contact

A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate, depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer, and doping the molybdenum nitride with a copper...

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Bibliographische Detailangaben
Hauptverfasser: KARPENKO OLEH P, ADDEPALLI PRATIMA V, SHIELDS THOMAS W
Format: Patent
Sprache:eng
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Zusammenfassung:A method for manufacturing a photovoltaic device may include depositing a semiconductor absorber layer on a substrate, depositing a molybdenum in the presence of a nitrogen to form a molybdenum nitride in contact with the semiconductor absorber layer, and doping the molybdenum nitride with a copper dopant.