MONITORING METHOD OF EXPOSURE APPARATUS

In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation ( E) and a focus deviation ( F) are calculated by following equations: TCD+BCD=α E+(TCD0...

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Hauptverfasser:	LO CHING-SHU, JIANG DA-BAI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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creator	LO CHING-SHU JIANG DA-BAI
description	In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation ( E) and a focus deviation ( F) are calculated by following equations: TCD+BCD=α E+(TCD0+BCD0) TCD−BCD= 1 F+ 2 F3 Here, α, 1 and 2 are constants, E=E−E0, F=F−F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.
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A dose deviation ( E) and a focus deviation ( F) are calculated by following equations: TCD+BCD=α E+(TCD0+BCD0) TCD−BCD= 1 F+ 2 F3 Here, α, 1 and 2 are constants, E=E−E0, F=F−F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110331&DB=EPODOC&CC=US&NR=2011076601A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110331&DB=EPODOC&CC=US&NR=2011076601A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LO CHING-SHU</creatorcontrib><creatorcontrib>JIANG DA-BAI</creatorcontrib><title>MONITORING METHOD OF EXPOSURE APPARATUS</title><description>In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. 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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
title	MONITORING METHOD OF EXPOSURE APPARATUS
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