MONITORING METHOD OF EXPOSURE APPARATUS

In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation ( E) and a focus deviation ( F) are calculated by following equations: TCD+BCD=α E+(TCD0...

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Bibliographische Detailangaben
Hauptverfasser:	LO CHING-SHU, JIANG DA-BAI
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation ( E) and a focus deviation ( F) are calculated by following equations: TCD+BCD=α E+(TCD0+BCD0) TCD−BCD= 1 F+ 2 F3 Here, α, 1 and 2 are constants, E=E−E0, F=F−F0, E represents a real exposure dose, F represents a real exposure focus, E0 represents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, F0 represents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCD0 and BCD0 are theoretical values in case of E0 and F0.