METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING REPROCESSED SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE

It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate.