OPTICAL PHASE MODULATOR AND OPTICAL PHASE MODULATING DEVICE

OPTICAL PHASE MODULATOR AND OPTICAL PHASE MODULATING DEVICE

The optical phase modulator of the present invention comprises: a main Mach-Zehnder interferometer having first and second main optical waveguide path arms, and whose initial phase difference in the used wavelength is ; a first sub Mach-Zehnder interferometer having first and second sub optical wave...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: FUNABSHI MASAKI, KISE TOMOFUMI
Format: Patent
Sprache:eng
Schlagworte:
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:The optical phase modulator of the present invention comprises: a main Mach-Zehnder interferometer having first and second main optical waveguide path arms, and whose initial phase difference in the used wavelength is ; a first sub Mach-Zehnder interferometer having first and second sub optical waveguide path arms that are formed in said first main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0; and a second sub Mach-Zehnder interferometer having third and fourth sub optical waveguide path arms that are formed in said second main optical waveguide path arm, and whose initial phase difference in the used wavelength is 0. Of each of the main optical waveguide path arms and first through fourth sub optical waveguide path arms, at least the portions where high-frequency electrodes are formed is constructed using semiconductor waveguide paths, and are capable of reducing the effects of frequency chirping caused by an orthogonal component that occurs due to light absorption in the semiconductor.